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类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 额定功率 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 资历状况 | 配置 | 行间距 | 通道数量 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 雪崩能量等级（Eas） | 场效应管技术 | 恢复时间 | 最大结点温度（Tj） | 场效应管特性 | 栅源电压 | 反馈上限-最大值 (Crss) | 接通时间-最大值(ton) | 最小击穿电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | FDS4935A | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 48 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2002 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 23MOhm | -30V | 900mW | 鸥翼 | -7A | 30V | Dual | 7A | 增强型MOSFET | 1.6W | 13 ns | 2 P-Channel (Dual) | SWITCHING | 23m Ω @ 7A, 10V | 3V @ 250μA | 1233pF @ 15V | 21nC @ 5V | 10ns | 25 ns | 7A | -1.6V | 20V | -30V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.6 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | IRF7380TRPBF | Infineon Technologies | 数据表 | 3 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 41 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 73MOhm | 80V | 2W | 鸥翼 | 260 | 3.6A | 30 | IRF7380PBF | Dual | 增强型MOSFET | 2W | 9 ns | 2 N-Channel (Dual) | SWITCHING | 73m Ω @ 2.2A, 10V | 4V @ 250μA | 660pF @ 25V | 23nC @ 10V | 10ns | 17 ns | 3.6A | 4V | 20V | 80V | 75 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 4 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| IRF9952TRPBF | Infineon Technologies | 数据表 | 11 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.5A 2.3A | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100mOhm | HIGH RELIABILITY | 2W | DUAL | 鸥翼 | 3.5A | IRF9952PBF | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 190pF @ 15V | 14nC @ 10V | 14ns | N-CHANNEL AND P-CHANNEL | 3.5A | 1V | 20V | 30V | 16A | 44 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||||||||
 | BSS84DW-7-F | Diodes Incorporated | 数据表 | 89591 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 2 | 18 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 10Ohm | -50V | 300mW | 鸥翼 | 260 | -130mA | 40 | BSS84DW | 6 | 2 | Dual | 增强型MOSFET | 300mW | 10 ns | 2 P-Channel (Dual) | SWITCHING | 10 Ω @ 100mA, 5V | 2V @ 1mA | 45pF @ 25V | 50V | 130mA | -1.6V | 20V | 0.13A | -50V | -50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.6 V | 50V | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
 | FDG8850NZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 400mOhm | 360mW | 鸥翼 | 2 | Dual | 增强型MOSFET | 360mW | 4 ns | 300mW | 2 N-Channel (Dual) | SWITCHING | 400m Ω @ 750mA, 4.5V | 1.5V @ 250μA | 120pF @ 10V | 1.44nC @ 4.5V | 1ns | 1 ns | 750mA | 1V | 12V | 0.75A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| FDS6898A | ON Semiconductor | 数据表 | 4285 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 14MOhm | 20V | 2W | 鸥翼 | 9.4A | 2 | Dual | 增强型MOSFET | 2W | 10 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 14m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 1821pF @ 10V | 23nC @ 4.5V | 15ns | 16 ns | 9.4A | 500mV | 12V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1 V | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| FDS8984 | ON Semiconductor | 数据表 | 12 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 42 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 23MOhm | 30V | 1.6W | 鸥翼 | 7A | Dual | 增强型MOSFET | 1.6W | 5 ns | 2 N-Channel (Dual) | SWITCHING | 23m Ω @ 7A, 10V | 2.5V @ 250μA | 635pF @ 15V | 13nC @ 10V | 9ns | 9 ns | 7mA | 1.7V | 20V | 7A | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.7 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| IRF7101TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 100mOhm | Matte Tin (Sn) | 2W | 20V | 2W | 鸥翼 | 3.5A | IRF7101PBF | 6.3 mm | Dual | 增强型MOSFET | 2W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 1.8A, 10V | 3V @ 250μA | 320pF @ 15V | 15nC @ 10V | 10ns | 30 ns | 3.5A | 3V | 12V | 20V | 14A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 3 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| IRF7907TRPBF | Infineon Technologies | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 9.1A 11A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2W | 鸥翼 | 260 | 30 | IRF7907PBF | Dual | 增强型MOSFET | 2W | 2 N-Channel (Dual) | 16.4m Ω @ 9.1A, 10V | 2.35V @ 25μA | 850pF @ 15V | 10nC @ 4.5V | 11A | 20V | 30V | 15 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
| IRF7319TRPBF | Infineon Technologies | 数据表 | 4527 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 29mOhm | AVALANCHE RATED, ULTRA LOW RESISTANCE | 2W | DUAL | 鸥翼 | 6.5A | IRF7319PBF | 6.3 mm | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 650pF @ 25V | 33nC @ 10V | 13ns | N-CHANNEL AND P-CHANNEL | 32 ns | 6.5A | 1V | 20V | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | Standard | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||||||||
| IRF7351TRPBF | Infineon Technologies | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2W | 鸥翼 | IRF7351PBF | Dual | 增强型MOSFET | 2W | 5.1 ns | 2 N-Channel (Dual) | SWITCHING | 17.8m Ω @ 8A, 10V | 4V @ 50μA | 1330pF @ 30V | 36nC @ 10V | 5.9ns | 60V | 6.7 ns | 8A | 20V | 8A | 60V | 64A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
 | FDMQ86530L | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 12-WDFN Exposed Pad | 12 | 242.3mg | SILICON | 511CR | 4 | 22 ns | -55°C~150°C TJ | Digi-Reel® | 2010 | GreenBridge™ PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.9W | DUAL | COMPLEX | 增强型MOSFET | 1.9W | 排水源头 | 8.8 ns | 4 N-Channel (H-Bridge) | SWITCHING | 17.5m Ω @ 8A, 10V | 3V @ 250μA | 2295pF @ 30V | 33nC @ 10V | 3.8ns | 60V | 2.8 ns | 8A | 1.8V | 20V | 8A | 0.0175Ohm | 60V | 50A | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 15 pF | 28ns | 800μm | 5mm | 4.5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| NDS9948 | ON Semiconductor | 数据表 | 42 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 16 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2002 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | -60V | 2W | 鸥翼 | -2.3A | Dual | 增强型MOSFET | 2W | 6 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 250m Ω @ 2.3A, 10V | 3V @ 250μA | 394pF @ 30V | 13nC @ 10V | 9ns | 60V | 3 ns | 2.3A | -1.5V | 20V | -60V | 10A | 15 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.5 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | FDY3000NZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 23 hours ago) | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 32mg | SILICON | 2 | 8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 700MOhm | Tin (Sn) | ESD PROTECTION | 625mW | FLAT | 2 | Dual | 增强型MOSFET | 625mW | 6 ns | 446mW | 2 N-Channel (Dual) | SWITCHING | 700m Ω @ 600mA, 4.5V | 1.3V @ 250μA | 60pF @ 10V | 1.1nC @ 4.5V | 8ns | 8 ns | 600mA | 1V | 12V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1 V | 700μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| FDS8858CZ | ON Semiconductor | 数据表 | 9 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 8.6A 7.3A | 2 | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 17mOhm | Tin (Sn) | 900mW | DUAL | 鸥翼 | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 17m Ω @ 8.6A, 10V | 3V @ 250μA | 1205pF @ 15V | 24nC @ 10V | 10ns | N-CHANNEL AND P-CHANNEL | 16 ns | 8.6A | 1.6V | 25V | -60V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.6 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| IRF7343TRPBF | Infineon Technologies | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.7A 3.4A | 2 | 43 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | AVALANCHE RATED, ULTRA LOW RESISTANCE | 2W | DUAL | 鸥翼 | 4.7A | IRF7343PBF | 6.3 mm | 2 | 增强型MOSFET | 2W | 8.3 ns | N and P-Channel | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | 10ns | N-CHANNEL AND P-CHANNEL | 22 ns | 4.7A | 1V | 20V | 55V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 1 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| FDG6335N | ON Semiconductor | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 9 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 300MOhm | 20V | 300mW | 鸥翼 | 700mA | Dual | 增强型MOSFET | 300mW | 5 ns | 2 N-Channel (Dual) | SWITCHING | 300m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 113pF @ 10V | 1.4nC @ 4.5V | 7ns | 7 ns | 700mA | 1.1V | 12V | 0.7A | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| FDS9945 | ON Semiconductor | 数据表 | 60688 In Stock | - | 最小起订量: 1 最小包装量: 1 | 21 Weeks | ACTIVE (Last Updated: 5 hours ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 19 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100MOhm | 60V | 2W | 鸥翼 | 3.5A | Dual | 增强型MOSFET | 2W | 7 ns | 1W | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 3.5A, 10V | 3V @ 250μA | 420pF @ 30V | 13nC @ 5V | 4.3ns | 3 ns | 3.5A | 2.5V | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.5 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
 | FDC6312P | ON Semiconductor | 数据表 | 5377 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | 18 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 115MOhm | Tin (Sn) | -20V | 960mW | 鸥翼 | 未说明 | -2.3A | 未说明 | 不合格 | 2 | Dual | 增强型MOSFET | 960mW | 8 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 115m Ω @ 2.3A, 4.5V | 1.5V @ 250μA | 467pF @ 10V | 7nC @ 4.5V | 13ns | 20V | 13 ns | 2.3A | -900mV | 8V | -20V | -20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | -900 mV | 1.1mm | 3mm | 1.7mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
 | IRLHS6376TRPBF | Infineon Technologies | 数据表 | 3816 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | SILICON | 2 | 11 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 1.5W | IRLHS6376 | Dual | 增强型MOSFET | 1.5W | DRAIN | 4.4 ns | 2 N-Channel (Dual) | SWITCHING | 63m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 270pF @ 25V | 2.8nC @ 4.5V | 11ns | 30V | 9.4 ns | 3.6A | 800mV | 12V | 3.4A | 0.082Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800 mV | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
 | NTZD3154NT1G | ON Semiconductor | 数据表 | 23010 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 400MOhm | Tin (Sn) | 20V | 250mW | FLAT | 260 | 540mA | 40 | NTZD3154N | 6 | Dual | 增强型MOSFET | 250mW | 6 ns | 2 N-Channel (Dual) | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 150pF @ 16V | 2.5nC @ 4.5V | 4ns | 4 ns | 540mA | 1V | 6V | 0.54A | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | 600μm | 1.7mm | 1.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| IRF9956TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | AVALANCHE RATED, HIGH RELIABILITY | 20V | 2W | 鸥翼 | 3.5A | IRF9956PBF | Dual | 增强型MOSFET | 2W | 6.2 ns | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 190pF @ 15V | 14nC @ 10V | 8.8ns | 3 ns | 3.5A | 20V | 0.1Ohm | 30V | 16A | 44 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 20 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||||||||||
| NTZD3152PT1G | ON Semiconductor | 数据表 | 59242 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 500mOhm | Tin (Sn) | ESD PROTECTION, LOW THRESHOLD | -20V | 250mW | FLAT | 260 | -430mA | 40 | NTZD3152P | 6 | Dual | 增强型MOSFET | 250mW | 10 ns | 2 P-Channel (Dual) | SWITCHING | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | 175pF @ 16V | 2.5nC @ 4.5V | 12ns | 20V | 12 ns | 430mA | 6V | 0.43A | -20V | METAL-OXIDE SEMICONDUCTOR | Standard | 600μm | 1.7mm | 1.3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| IRF7316TRPBF | Infineon Technologies | 数据表 | 2120 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.9A | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 58mOhm | 雪崩 额定 | -30V | 2W | 鸥翼 | -4.9A | IRF7316PBF | 2 | Dual | 增强型MOSFET | 2W | 13 ns | 2 P-Channel (Dual) | SWITCHING | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 710pF @ 25V | 34nC @ 10V | 13ns | 30V | 32 ns | -4.9A | -1V | 20V | -30V | 30A | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 66 ns | 150°C | 逻辑电平门 | -1 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||
| BSS8402DW-7-F | Diodes Incorporated | 数据表 | 3315 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 115mA 130mA | 2 | 18 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 10Ohm | HIGH RELIABILITY | 200mW | 鸥翼 | 260 | 115mA | 40 | BSS8402DW | 6 | 不合格 | 2 | Dual | 增强型MOSFET | 200mW | 10 ns | N and P-Channel | SWITCHING | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | 50pF @ 25V | 60V 50V | N-CHANNEL AND P-CHANNEL | 115mA | 2.5V | 20V | 0.13A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.5 V | 5 pF | 1mm | 2.2mm | 1.35mm | 无SVHC | ROHS3 Compliant | 无铅 |
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